Talk: Optical Properties of Single Defects in Hexagonal Boron Nitride

Talk by Assoc. Prof. Dr. Serkan Ateş

Department of Physics, İzmir Institute of Technology, Turkey

Photonics technology has reached a stage in which complex functional devices for the generation and detection of light signals can be routinely produced. Especially, the search for novel computation and communication schemes has created applications in which the manipulation and detection of extremely weak optical signals at single-photon level are crucial.

Among several systems, quantum emitters in atomically thin 2D based materials, i.e., transition metal di-chalcogenides and defects in hexagonal boron nitride (hBN), have recently attracted a great interest as potentially bright and stable solid-state single-photon sources.

In this talk, I will present our recent activities on optical properties of single quantum emitters in bulk hBN. Because of its large bandgap (~ 6 eV), hBN is known to be a good insulator, which also becomes an ideal candidate for exploring optically active defects with energies from UV to NIR.

Isolated defect centers in hBN are especially promising to develop on-chip room temperature efficient single photon sources. To gain insight about the optical properties, we study the temperature dependent optical properties of a single defect and observe that the emission spectra show characteristic features governed by the phonon dispersion of the host hBN. In addition, I will present our recent results on interaction of single quantum emitters in hBN with two-dimensional graphene and show a reversible and efficient energy transfer between the two material systems at a single-photon level.


fre 03 maj 19


DTU Lyngby
Bygning 303A
Auditorium 44